Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields

Y. A. Genenko, O. Hirsch, and P. Erhart
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symposium Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 International Symposium (2012)
doi: 10.1109/ISAF.2012.6297727

Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.